1 item symbol ratings unit remarks drain-source voltage v ds 150 v dsx 120 continuous drain current i d 33 4.1 *4 pulsed drain current i d(puls] 132 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 33 maximum avalanche energy e as *1 169 maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d 2.4 *4 150 operating and storage t ch +150 temperature range t stg electrical characteristics att c =25c ( unless otherwise specified) thermalcharacteristics 2SK3474-01 fuji power mosfet 200303 n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications for switching absolute maximum ratings at tc=25c ( unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =150v v gs =0v v ds =120v v gs =0v v gs =30v i d =11.5a v gs =10v i d =11.5a v ds =25v v cc =48v i d =11.5a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient r th(ch-a) *4 channel to ambient 0.833 87.0 52.0 c/w c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r t d(off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =48v i d =23a v gs =10v l=228 h t ch =25c i f =23a v gs =0v t ch =25c i f =23a v gs =0v -di/dt=100a/s t ch =25c v v a a a v a mj kv/s kv/s w w c c 150 3.0 5.0 25 250 10 100 54 70 816 1500 1730 200 300 17 26 13 20 15 23 34 51 15 23 34 51 9 13.5 12.5 19 33 1.10 1.60 0.13 0.6 -55 to +150 outline drawings [mm] equivalent circuit schematic super f ap-g series foot print pattern (1) gate(g) (3) source(s) [power line] (4) drain(d) (2) source(s) [signal line] v gs =30v ta=25c v ds 150v ta=25c = < *4 surface mounted on 1000mm 2 , t=1.6mm fr-4 pcb(drain pad area:500mm 2 ) *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < *1 l=0.228mh, vcc=48v, see to avalanche energy graph *2 tch 150c = <
2 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0123456 0 10 20 30 40 50 20v 7.0v 10v 8v 6.5v 7.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v characteristics 2SK3474-01 fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c 0 5 10 15 20 25 30 35 40 45 50 0.00 0.05 0.10 0.15 0.20 0.25 0.30 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v 6.0v vgs= 5.5v rds(on)=f(id):80s pulse test, tch=25c 0255075100125150 0 1 2 3 4 5 surface mounted on 1000mm2,t=1.6mm fr-4 pcb (drain pad area : 500mm2) allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 200 allowable power dissipation pd=f(tc) pd [w] tc [ c]
3 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 rds(on) [ m ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=11.5a,vgs=10v 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 14 qg [c] typical gate charge characteristics vgs [v] 72v 48v vcc= 36v 2SK3474-01 fuji power mosfet vgs=f(qg):id=23a, tch=25c if=f(vsd):80s pulse test,tch=25c -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. typ. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma vgs(th) [v] tch [ c] 10 -1 10 0 10 1 10 2 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a] t=f(id):vcc=48v, vgs=10v, rg=10 ?
4 2SK3474-01 fuji power mosfet 0 1000 2000 3000 4000 5000 0 10 20 30 40 50 60 70 80 90 100 rth(ch-a) [ o c/w] drain pad area [mm 2 ] thermal resistance vs. drain pad area t=1.6mm fr-4 pcb 0 25 50 75 100 125 150 0 100 200 300 400 500 i as =14a i as =33a i as =20a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=48v 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec] http://www.fujielectric.co.jp/denshi/scd
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